leshan radio company, ltd. s-l2n7002kwt1g device marking shipping ordering information 3000 tape & reel m = device code m =month code marking diagram & pin assignment 3 2 1
n?channel sot?323 ? small signal mosfet 380 mamps, 60 volts ? gate source drain 3 2 1 (top view) simplified schematic we declare that the material of product are halogen free and compliance with rohs requirements. features ? esd protected ? low r ds(on) ? surface mount package ? this is a pb ? free device applications ? low side load switch ? level shift circuits ? dc ? dc converter ? portable applications i.e. dsc, pda, cell phone, etc. maximum ratings (t j = 25 c unless otherwise stated) rating symbol value unit drain ? to ? source voltage v dss 60 v gate ? to ? source voltage v gs 20 v drain current (note 1) steady state t a = 25 c t a = 85 c t < 5 s t a = 25 c t a = 85 c i d 320 230 380 270 ma power dissipation (note 1) steady state t < 5 s p d 300 420 mw pulsed drain current (t p = 10 s) i dm 1.5 a operating junction and storage temperature range t j , t stg ? 55 to +150 c source current (body diode) i s 300 ma lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c gate ? source esd rating (hbm, method 3015) esd 2000 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit junction ? to ? ambient ? steady state (note 1) r ja 417 c/w junction ? to ? ambient ? t 5 s (note 1) r ja 300 1. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 60 v 2.3 @ 10 v r ds(on) max 380 ma i d max (note 1) v (br)dss 2.7 @ 5.0 v l2n7002kwt1g sk sk sk 1 3 2 sot?323 (sc?70) rev.c 1/6 l2n7002kwt1g s-l2n7002kwt1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable.
leshan radio company, ltd. l2n7002kwt1g , s-l2n7002kwt1g electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 71 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 60 v t j = 25 c 1 a t j = 125 c 500 v gs = 0 v, v ds = 50 v t j = 25 c 100 na gate ? to ? source leakage current i gss v ds = 0 v, v gs = 20 v 10 a on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1 2.5 v negative threshold temperature coefficient v gs(th) /t j 4.0 mv/ c drain ? to ? source on resistance r ds(on) v gs = 10 v, i d = 500 ma 2.3 v gs = 5.0 v, i d = 50 ma 2.7 forward transconductance g fs v ds = 5 v, i d = 200 ma 80 ms charges and capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 25 v pf output capacitance c oss reverse transfer capacitance c rss total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v; i d = 500 ma nc threshold gate charge q g(th) gate ? to ? source charge q gs gate ? to ? drain charge q gd switching characteristics, v gs = v (note 3) turn ? on delay time t d(on) ns rise time t r turn ? off delay time t d(off) fall time t f drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 115 ma t j = 25 c 1.2 v t j = 85 c 0.7 2. pulse test: pulse width 300 s, duty cycle 2% 3. switching characteristics are independent of operating junction temperatures rev.c 2/6 v ds = 10 v, v gen = 10 v, i d = 500 ma 34 3 2.2 0.71 0.1 0.32 0.16 3.8 3.4 19 12
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.2 0.4 0.6 0.8 1.0 4.0 v 3.0 v v gs = 5,6,7.8,9.10 v 0123456 0.0 0.1 0.2 0.3 0.4 t j =125 o c t j =25 o c t j =-55 o c 0.10.20.30.40.50.60.70.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 t j = 125 o c t j = 85 o c t j = 25 o c v gs = 5.0v t j = -55 o c 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t j = 125 o c t j = 85 o c t j = 25 o c v gs = 10v t j = -55 o c leshan radio company, ltd. typical electrical characteristics rev .c 3/6 l2n7002kwt1g , s-l2n7002kwt1g figure 1. on ? region characteristics figure 2. transfer characteristics v ds , drain ? to ? source voltage (v) v gs , gate ? to ? source voltage (v) i d , drain current (a) i d , drain current (a) figure 3. on ? resistance vs. drain current and temperature figure 4. on ? resistance vs. drain current and temperature i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) i d , drain current (a) r ds(on) , drain ? to ? source resistance ( )
12345678910 1 2 3 4 5 6 7 8 9 10 i d = 0.5 a -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gs = 5.0 v v gs = 10 v r on 10v@t j = 25 o c: 2.3 r on 5.0v@t j = 25 o c: 2.7 i d = 0.5 a leshan radio company, ltd. typical electrical characteristics rev .c 4/6 figure 5. on ? resistance vs. gate ? to ? source voltage figure 6. on ? resistance variation with temperature v gs , gate ? to ? source voltage (v) t j , junction temperature ( c) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance (normalized) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 45 50 55 60 frequency = 1 mhz crss coss ciss 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ds = 10 v i ds = 0.5 a figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge qg, total gate charge (nc) v gs , gate ? to ? source voltage (v) c, capacitance (pf) gate ? to ? source or drain ? to ? source voltage (v) l2n7002kwt1g , s-l2n7002kwt1g
leshan radio company, ltd. typical electrical characteristics figure 9. diode forward voltage vs. current v sd , source ? to ? drain voltage (v) i s , source current (a) rev .c 5/6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 2 t j = 150 o c t j =25 o c l2n7002kwt1g , s-l2n7002kwt1g
leshan radio company, ltd. sc?70 (sot?323) a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m m = date code = pb?free package generic marking diagram 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref xx = specific device code rev.c 6/6 l2n7002kwt1g , s-l2n7002kwt1g
|
